Surface Morphology Evolution of GaAs by Low Energy Ion Sputtering
نویسندگان
چکیده
منابع مشابه
Surface Morphology Evolution of GaAs by Low Energy Ion Sputtering
Low energy Ar ion sputtering, typically below 1,200 eV, of GaAs at normal beam incident angle is investigated. Surface morphology development with respect to varying energy is analyzed and discussed. Dot-like patterns in the nanometer scale are obtained above 600 eV. As the energy approaches upper eV range regular dots have evolved. The energy dependent dot evolution is evaluated based on solut...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2007
ISSN: 1931-7573,1556-276X
DOI: 10.1007/s11671-007-9090-4